Volume 6, Issue 1, June 2020, Page: 1-6
Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type
Abdoul Aziz Correa, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Mamadou Dia, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
El Hadji Mamadou Keita, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Chamsdine Sow, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Babacar Mbow, Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Received: Jun. 29, 2020;       Accepted: Jul. 13, 2020;       Published: Aug. 4, 2020
DOI: 10.11648/j.jmpt.20200601.11      View  131      Downloads  24
Abstract
The effects of impact ionization in the space charge zone on the multiplication factor of the carriers, the noise excess factor, and the multiplication voltage (avalanche voltage) are modeled for avalanche photodiodes (APD). Research has shown that photomultiplication of charge carriers and impact ionization allow to improve the quantum efficiency of avalanche photodiodes. However, these phenomena are not without effect on the background noise which tends to disturb the signal of these devices. The aim of this article is therefore to verify the effect of impact ionization on this noise characterized by an noise excess factor. Our work consists, at first, to establish the mathematical expressions linking the characteristic parameters of photomultiplication, impact ionization and noise before carring out simulations on photodiode model based on CuInSe2 (CIS) of the P+N type. In our photocurrent calculation models, we first worked in the absence of electronic ionization, then in the presence of electronic ionization. Our simulation results confirm that ionization by impact in the part of the multiplication layer far from the active surface (the junction) increases the noise excess factor. We were able to note that the effect of impact ionization places strict constraints on the doping level of the carrier multiplication layer in order to minimize noise. However, the noise excess factor should be reduced in the layer (CuInSe2 (N)) where the electric field and the multiplication factor of the charge carriers are important. We have shown that the gap between the ionization coefficients of the carriers (electrons and holes), reduces the excess noise in the avalanche layer (carrier multiplication layer or space charge area). For a coefficients ionization ratio k=kp/kn=11, a low value of the noise excess factor of the order of 1.5 is obtained with a multiplication coefficient Mph=2.
Keywords
Noise Excess Factor, Ionization Coefficient, Photomultiplication, Solar Photodiode
To cite this article
Abdoul Aziz Correa, Mamadou Dia, El Hadji Mamadou Keita, Chamsdine Sow, Babacar Mbow, Effect of Impact Ionization on the Noise Excess Factor in Solar Photodiodes Based on CuInSe2 (CIS) of P+N Type, Journal of Photonic Materials and Technology. Vol. 6, No. 1, 2020, pp. 1-6. doi: 10.11648/j.jmpt.20200601.11
Copyright
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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